Hwang Yu-Jin, Kim Do-Kyung, Jeon Sang-Hwa, Wang Ziyuan, Park Jaehoon, Lee Sin-Hyung, Jang Jaewon, Kang In Man, Bae Jin-Hyuk
School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
Nanomaterials (Basel). 2022 Sep 7;12(18):3097. doi: 10.3390/nano12183097.
Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc-tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (V) increased from 21.5% to 38.2%. According to increased V, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm V s. In addition, we found that the threshold voltage negatively shifted from 3.08 to -0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.
通过控制氧化锌锡（ZTO）半导体薄膜的退火时间，系统地研究了结构弛豫（SR）对溶液法制备的氧化锌锡（ZTO）薄膜晶体管（TFT）电学特性和偏置稳定性的影响。需要注意的是，发现SR随退火时间的增加而增加。由于SR增加，氧空位（V）的比例从21.5%增加到38.2%。随着V的增加，饱和区的迁移率从0.38增加到2.41 cm² V⁻¹ s⁻¹，增加了六倍。此外，我们发现阈值电压从3.08 V负移至 -0.95 V。关于偏置稳定性问题，随着SR增加，与负偏置应力的反向特性相比，ZTO TFT的正偏置应力增强。我们的理解有望为改善尚未得到充分研究的无稀有金属氧化物半导体TFT的电学特性和偏置稳定性提供一种基本方法。
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