Yu Qing, Fan Guoxiang, Ren Wei, Fan Qingqing, Ti Jinming, Li Junhong, Wang Chenghao
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2022 Sep 26;13(10):1597. doi: 10.3390/mi13101597.
We proposed a PZT-film-based piezoelectric micromachined ultrasonic transducer (pMUT) with an I-shaped composite diaphragm to improve the sensitivity and resonant frequency of pMUTs with the same diaphragm area. The finite element method (FEM) simulation results indicated that the pMUT with an I-shaped composite diaphragm had relatively high sensitivity and resonant frequency. The pMUT with an I-shaped diaphragm had a 36.07% higher resonant frequency than a pMUT with a circular diaphragm. The pMUT with an I-shaped diaphragm had a 3.65 dB higher loop gain (loss) than a pMUT with a rectangular diaphragm. The piezoelectric layer thickness of the pMUT with an I-shaped composite diaphragm was then optimized. Maximum loop gain (loss) was reached when the piezoelectric layer thickness was 8 μm. The pMUT with an I-shaped composite diaphragm was fabricated using the MEMS method, and its performance was evaluated.
我们提出了一种基于PZT薄膜的压电微机械超声换能器(pMUT),其具有I形复合隔膜,以在相同隔膜面积的情况下提高pMUT的灵敏度和共振频率。有限元方法(FEM)模拟结果表明,具有I形复合隔膜的pMUT具有相对较高的灵敏度和共振频率。具有I形隔膜的pMUT的共振频率比具有圆形隔膜的pMUT高36.07%。具有I形隔膜的pMUT的环路增益(损耗)比具有矩形隔膜的pMUT高3.65 dB。然后对具有I形复合隔膜的pMUT的压电层厚度进行了优化。当压电层厚度为8μm时,达到了最大环路增益(损耗)。采用微机电系统(MEMS)方法制造了具有I形复合隔膜的pMUT,并对其性能进行了评估。