Melchioni Nicola, Fabbri Filippo, Tredicucci Alessandro, Bianco Federica
NEST Laboratory, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Micromachines (Basel). 2022 Oct 3;13(10):1666. doi: 10.3390/mi13101666.
Artificially-induced defects in the lattice of graphene are a powerful tool for engineering the properties of the crystal, especially if organized in highly-ordered structures such as periodic arrays. A method to deterministically induce defects in graphene is to irradiate the crystal with low-energy (<20 keV) electrons delivered by a scanning electron microscope. However, the nanometric precision granted by the focused beam can be hindered by the pattern irradiation itself due to the small lateral separation among the elements, which can prevent the generation of sharp features. An accurate analysis of the achievable resolution is thus essential for practical applications. To this end, we investigated patterns generated by low-energy electron irradiation combining atomic force microscopy and micro-Raman spectroscopy measurements. We proved that it is possible to create well-defined periodic patterns with precision of a few tens of nanometers. We found that the defected lines are influenced by electrons back-scattered by the substrate, which limit the achievable resolution. We provided a model that takes into account such substrate effects. The findings of our study allow the design and easily accessible fabrication of graphene devices featuring complex defect engineering, with a remarkable impact on technologies exploiting the increased surface reactivity.
人为诱导石墨烯晶格中的缺陷是调控晶体性质的有力工具,尤其是当这些缺陷组织成诸如周期性阵列等高度有序的结构时。一种在石墨烯中确定性地诱导缺陷的方法是用扫描电子显微镜发射的低能(<20 keV)电子照射晶体。然而,由于元素间横向间距小,图案照射本身可能会阻碍聚焦束所赋予的纳米级精度,这可能会妨碍生成清晰的特征。因此,对可实现的分辨率进行精确分析对于实际应用至关重要。为此,我们结合原子力显微镜和显微拉曼光谱测量,研究了低能电子辐照产生的图案。我们证明可以精确到几十纳米创建明确的周期性图案。我们发现缺陷线受到衬底背散射电子的影响,这限制了可实现的分辨率。我们提供了一个考虑到此类衬底效应的模型。我们的研究结果使得设计并轻松制造具有复杂缺陷工程的石墨烯器件成为可能,这对利用增加的表面反应性的技术具有显著影响。