Fu En-Bo, Liu Yu, Hou Xiang-Rui, Feng Ye, Yang Chun-Lei, Shao Yan
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.
Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China.
Nanoscale Res Lett. 2022 Oct 27;17(1):102. doi: 10.1186/s11671-022-03739-8.
Light-stimulated synaptic devices are promising candidates for the development of artificial intelligence systems because of their unique properties, which include broad bandwidths, low power consumption, and superior parallelism. The key to develop such devices is the realization of photoelectric synaptic behavior in them. In this work, visible-light-stimulated synaptic transistors based on CdSe quantum dot (CdSe QD)/amorphous In-Ga-Zn-O hybrid channels are proposed. This design can not only improve the charge separation efficiency of the photogenerated carriers, but also can induce delayed decay of the photocurrent. The improved charge separation efficiency enhances the photoelectric properties significantly, while the delayed decay of the photocurrent led to the realization of photoelectric synaptic behaviors. This simple and efficient method of fabricating light-stimulated phototransistors may inspire new research progress into the development of artificial intelligence systems.
由于其独特的特性，包括宽带宽、低功耗和卓越的并行性，光刺激突触器件是人工智能系统开发的有前途的候选者。开发此类器件的关键在于在其中实现光电突触行为。在这项工作中，提出了基于CdSe量子点（CdSe QD）/非晶In-Ga-Zn-O混合通道的可见光刺激突触晶体管。这种设计不仅可以提高光生载流子的电荷分离效率，还可以诱导光电流的延迟衰减。提高的电荷分离效率显著增强了光电性能，而光电流的延迟衰减导致了光电突触行为的实现。这种制造光刺激光电晶体管的简单有效方法可能会激发人工智能系统开发的新研究进展。
