Croteau Adam, White Amanda, Cornell Kenneth A, Browning Jim
Boise State University in the following departments: Electrical & Computer Engineering: Croteau and Browning; Mechanical Engineering: White; Chemistry & Biochemistry: Cornell.
IEEE Trans Radiat Plasma Med Sci. 2022 May;6(5):619-625. doi: 10.1109/trpms.2021.3133183. Epub 2021 Dec 7.
Cold atmospheric pressure plasma (CAP) treatment has been shown to kill bacteria and remove bacterial biofilms from surfaces. Here we report the etch capacity of a linear discharge CAP device on biofilms. A 21 kHz, 1.4 kV RMS AC voltage applied to the CAP electrodes generated a hydrated Ar plasma between the plates, with the gas flow directing the plasma species toward the biological sample, causing both bacterial killing and etching of the biofilm. Typical discharge currents for a 2.4 cm long, 0.6 mm wide linear discharge device were 1-4.4 mA. Hydrated Ar flow gas was critical for removal of biofilm from a stainless steel substrate, while both hydrated and dry Ar + O2, Ar + air, O2 only, and air only flow gas mixtures did not cause etching at equivalent or greater discharge current intensities. A biofilm etch rate of > 2 m/min was achieved, provided the plasma discharge was within 1-2 mm of the substrate surface and used a hydrated Ar gas flow of at least 5 LPM.
冷大气压等离子体（CAP）处理已被证明能杀死细菌并从表面去除细菌生物膜。在此，我们报告一种线性放电CAP装置对生物膜的蚀刻能力。施加到CAP电极上的21 kHz、1.4 kV均方根交流电压在极板之间产生了一种水合氩等离子体，气流将等离子体物质导向生物样品，从而实现细菌杀灭和生物膜蚀刻。对于一个长2.4 cm、宽0.6 mm的线性放电装置，典型放电电流为1 - 4.4 mA。水合氩气流对于从不锈钢基底上去除生物膜至关重要，而水合和干燥的Ar + O2、Ar + 空气、仅O2以及仅空气的气流混合物在等效或更高放电电流强度下均不会引起蚀刻。只要等离子体放电距离基底表面1 - 2 mm以内且使用至少5 LPM的水合氩气流，就能实现大于2 m/分钟的生物膜蚀刻速率。
