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基于噻吩并[3,4-]吡咯-4,6-二酮和均苯四甲酸二酰亚胺通过CH-CH芳基化反应制备的聚合物用于高性能薄膜晶体管。

Polymers based on thieno[3,4-]pyrrole-4,6-dione and pyromellitic diimide by CH-CH arylation reaction for high-performance thin-film transistors.

作者信息

Nassar Gamal M, Chung Jeyon, Trinh Cuc Kim, El-Shehawy Ashraf A, El-Barbary Ahmed A, Kang Youngjong, Lee Jae-Suk

机构信息

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) 123 Cheomdangwagi-ro, Buk-gu Gwangju 61005 Korea

Department of Chemistry, Faculty of Science, Tanta University Tanta 31527 Egypt

出版信息

RSC Adv. 2022 Nov 1;12(48):31180-31185. doi: 10.1039/d2ra04602d. eCollection 2022 Oct 27.

Abstract

Three homopolymers were successfully synthesized by direct CH-CH arylation polymerization of thieno[3,4-]pyrrole-4,6-dione or pyromellitic diimide derivatives affording highly purified polymers with high molecular weights (43.0-174.7 K). Thieno[3,4-]pyrrole-4,6-dione and pyromellitic diimide derivatives are considered as electron-withdrawing units. The synthesized homopolymers P1, P2, and P3 showed band gaps in the range of 2.13-2.08 eV, respectively. The electron mobilities of the three homopolymers have been investigated. The thin film transistor for P1 prepared by the eutectic-melt-assisted nanoimprinting method achieved an electron mobility of 2.11 × 10 cm s V. Based on the obtained results, the synthesized polymers can be used as potential electron acceptors in solar cell applications.

摘要

通过噻吩并[3,4 - ]吡咯 - 4,6 - 二酮或均苯四甲酸二酰亚胺衍生物的直接CH - CH芳基化聚合成功合成了三种均聚物,得到了具有高分子量(43.0 - 174.7 K)的高纯度聚合物。噻吩并[3,4 - ]吡咯 - 4,6 - 二酮和均苯四甲酸二酰亚胺衍生物被视为吸电子单元。合成的均聚物P1、P2和P3的带隙分别在2.13 - 2.08 eV范围内。研究了这三种均聚物的电子迁移率。通过共晶熔体辅助纳米压印方法制备的P1薄膜晶体管实现了2.11×10 cm s V的电子迁移率。基于所得结果,合成的聚合物可作为太阳能电池应用中的潜在电子受体。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1c5e/9623454/622f962cc685/d2ra04602d-s1.jpg

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