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柔性晶体管结构存储的最新进展

Recent Process of Flexible Transistor-Structured Memory.

机构信息

Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China.

School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, 114051, China.

出版信息

Small. 2021 Mar;17(9):e1905332. doi: 10.1002/smll.201905332. Epub 2020 Apr 3.

Abstract

Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.

摘要

柔性晶体管结构存储器(FTSM)因其在柔性电子学中的重要作用而受到广泛关注。对于非易失性信息存储,已经开发出具有浮栅、电荷陷阱和铁电机制的 FTSM。通过引入光学感应模块,FTSM 可以通过光学输入进行操作,用作光存储晶体管。作为 FTSM 的一种特殊类型,晶体管结构人工突触模拟了生物突触的重要功能,以模拟受大脑启发的记忆行为和神经信号传输。这项工作综述了上述 FTSM 的最新发展,重点介绍了工作机制、材料和柔韧性。

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