Wu Xin, Zhang Lu, Hong Liang
Department of Medicine, University of Illinois at Chicago, Chicago, IL 60612, USA.
Department of Physiology and Biophysics, University of Illinois at Chicago, Chicago, IL 60612, USA.
iScience. 2022 Oct 20;25(11):105420. doi: 10.1016/j.isci.2022.105420. eCollection 2022 Nov 18.
The voltage-gated proton channel H1 is a member of voltage-gated ion channels containing voltage-sensing domains (VSDs). The VSDs are made of four membrane-spanning segments (S1 through S4), and their function is to detect changes in membrane potential in the cells. A highly conserved phenylalanine 150 (F150) is located in the S2 segment of human voltage-gated proton channels. We previously discovered that the F150 is a binding site for the open channel blocker 2GBI. Here, we show that the H1 VSD voltage-dependent activation requires a hydrophobic group at position F150. We perform double-mutant cycle analysis to probe interactions between F150 and positively charged arginines in the S4 segment of the channel. Our results indicate that F150 interacts with two arginines (R2 and R3) in the S4 segment and catalyzes the transfer of the S4 arginines in the process of voltage-dependent activation.
电压门控质子通道H1是包含电压感应结构域(VSDs)的电压门控离子通道家族的一员。VSDs由四个跨膜片段(S1至S4)组成,其功能是检测细胞中膜电位的变化。高度保守的苯丙氨酸150(F150)位于人类电压门控质子通道的S2片段中。我们之前发现F150是开放通道阻滞剂2GBI的结合位点。在此,我们表明H1 VSD的电压依赖性激活需要F150位置有一个疏水基团。我们进行双突变循环分析以探究F150与通道S4片段中带正电荷的精氨酸之间的相互作用。我们的结果表明F150与S4片段中的两个精氨酸(R2和R3)相互作用,并在电压依赖性激活过程中催化S4精氨酸的转移。