Al-Khaldi Amal, Fadlallah Mohamed M, Alhajri Fawziah, Maarouf Ahmed A
Department of Physics, Institute for Research and Medical Consultations, Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia.
Department of Physics, Faculty of Science, Benha University, Benha 13518, Egypt.
Nanomaterials (Basel). 2022 Dec 7;12(24):4351. doi: 10.3390/nano12244351.
Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials. Here, we investigate the structural, electronic, and gas-adsorption properties of hybrid structures made from graphene/hexagonal boron nitride and 2H-molybdenum disulfide (G/BN@MoS) monolayers. We consider hybrid systems in which the G/BN patch is at the Mo plane (model I) and the S plane (model II). We find that the implanted hexagon of G or BN in MoS alters its electronic properties: G@MoS (I,II) are metallic, while BN@MoS (I) is an n-type conducting and BN@MoS (II) is semiconducting. We study the molecular adsorption of some diatomic gases (H, OH, N, NO, CO), triatomic gases (CO, NO, HS, SO), and polyatomic gases (COOH, CH, and NH) on our hybrid structures while considering multiple initial adsorption sites. Our results suggest that the hybrid systems may be suitable materials for some applications: G@MOS (I) for oxygen reduction reactions, BN@MoS (I,II) for NH-based hydrogen production, and G@MoS (I) and BN@MoS (I,II) for filtration of No, Co, SO, HS, and NO.
杂化结构通常具有比其组成材料更优异的性能。这源于新材料结构或物理性能的变化。在此,我们研究了由石墨烯/六方氮化硼和二硫化钼(G/BN@MoS)单层制成的杂化结构的结构、电子和气体吸附性能。我们考虑了G/BN片层位于Mo平面(模型I)和S平面(模型II)的杂化体系。我们发现,在MoS中植入的G或BN六边形改变了其电子性能:G@MoS(I、II)是金属性的,而BN@MoS(I)是n型导电的,BN@MoS(II)是半导体性的。我们在考虑多个初始吸附位点的情况下,研究了一些双原子气体(H、OH、N、NO、CO)、三原子气体(CO、NO、HS、SO)和多原子气体(COOH、CH和NH)在我们的杂化结构上的分子吸附。我们的结果表明,这些杂化体系可能是某些应用的合适材料:G@MOS(I)用于氧还原反应,BN@MoS(I、II)用于基于NH的制氢,以及G@MoS(I)和BN@MoS(I、II)用于过滤No、Co、SO、HS和NO。