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基于全结的硅调制器的有效三维蒙特卡罗方法

Silicon modulator based on omni junctions by effective 3D Monte-Carlo method.

作者信息

Zhu Zijian, Zhao Yingxuan, Huang Haiyang, Li Yang, She Xiaojuan, Zhu Junbo, Liao Han, Liu Xiang, Huang Rui, Liu Hongbao, Sheng Zhen, Gan Fuwan

出版信息

Opt Express. 2022 Dec 19;30(26):47326-47337. doi: 10.1364/OE.475511.

DOI:10.1364/OE.475511
PMID:36558663
Abstract

3D doping structure has significant advantages in modulation efficiency and loss compared with 2D modulator doping profiles. However, to the best of our knowledge, previous work on 3D simulation methods for interdigitated doping designs applied simplified models, which prohibited complex 3D doping. In this work, innovative omni junctions, based on the effective 3D Monte-Carlo method, are believed to be the first proposed for high-performance modulators. Simulation results show that the modulation efficiency reaches 0.88 V·cm, while the loss is only 16 dB/cm, with capacitance below 0.42 pF/mm. This work provides a modulator design with superior modulation efficiency and serviceability for high-speed datacom.

摘要

与二维调制器掺杂分布相比,三维掺杂结构在调制效率和损耗方面具有显著优势。然而,据我们所知,先前关于叉指式掺杂设计的三维模拟方法的工作采用了简化模型,这限制了复杂的三维掺杂。在这项工作中,基于有效的三维蒙特卡罗方法的创新全向结被认为是首次为高性能调制器提出的。仿真结果表明,调制效率达到0.88V·cm,而损耗仅为16dB/cm,电容低于0.42pF/mm。这项工作为高速数据通信提供了一种具有卓越调制效率和适用性的调制器设计。

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引用本文的文献

1
X-Intersected Silicon Modulator of Well-Rounded Performance.性能全面的X交叉硅调制器。
Micromachines (Basel). 2023 Jul 17;14(7):1435. doi: 10.3390/mi14071435.