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通过面内离子迁移在二维层状CuInPS中形成的高度可调谐横向同质结。

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInPS via In-Plane Ionic Migration.

作者信息

Zhu Huanfeng, Li Jialin, Chen Qiang, Tang Wei, Fan Xinyi, Li Fan, Li Linjun

机构信息

State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China.

Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China.

出版信息

ACS Nano. 2023 Jan 12. doi: 10.1021/acsnano.2c09280.

DOI:10.1021/acsnano.2c09280
PMID:36633906
Abstract

As basic building blocks for next-generation information technologies devices, high-quality - junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu ions under an in-plane electric field, a lateral - homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS - homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.

摘要

作为下一代信息技术设备的基本构建块,基于范德华(vdW)材料的高质量结引起了广泛关注。与传统的二维(2D)异质结二极管相比,新兴的同质结因其固有优势更具吸引力,例如连续的能带排列和较小的载流子俘获。在此,利用平面内电场下铜离子的长程迁移,在二维层状硫代磷酸铜铟(CIPS)中构建了横向同质结。对称的Au/CIPS/Au器件表现出电场驱动的电阻开关(RS),并伴有整流行为,无需任何栅极控制。此外,这种整流行为可以通过极化电压连续调制。我们推断,可逆整流RS行为受有效横向内建电势和极化过程中界面势垒变化的控制。此外,CIPS同质结通过光伏效应得到证实,由于更好的光生载流子分离效率,光谱响应延伸至可见光区域。因此,这项工作提供了一种通过电场驱动离子迁移制造同质结的简便方法。

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