Wang Shuxia, He Jiajun, Sun Panxu
School of Materials Science and Engineering, Zhengzhou University of Aeronautics, Zhengzhou 450046, China.
School of Civil Engineering, Zhengzhou University, Zhengzhou 450001, China.
Materials (Basel). 2023 Sep 2;16(17):6035. doi: 10.3390/ma16176035.
Low reflectivity is of great significance to photoelectric devices, optical displays, solar cells, photocatalysis and other fields. In this paper, vanadium oxide is deposited on pattern SiO via atomic layer deposition and then annealed to characterize and analyze the anti-reflection effect. Scanning electron microscope (SEM) images indicate that the as-deposited VO film has the advantages of uniformity and controllability. After annealing treatment, the VO@pattern SiO has fewer crevices compared with VO on the accompanied planar SiO substrate. Raman results show that there is tiny homogeneous stress in the VO deposited on pattern SiO, which dilutes the shrinkage behavior of the crystallization process. The optical reflection spectra indicate that the as-deposited VO@pattern SiO has an anti-reflection effect due to the combined mechanism of the trapping effect and the effective medium theory. After annealing treatment, the weighted average reflectance diminished to 1.46% in the visible near-infrared wavelength range of 650-1355 nm, in which the absolute reflectance is less than 2%. Due to the multiple scattering effect caused by the tiny cracks generated through annealing, the anti-reflection effect of VO@pattern SiO is superior to that of VO@pattern SiO. The ultra-low reflection frequency domain amounts to 705 nm, and the lowest absolute reflectance emerges at 1000 nm with an astonishing value of 0.86%. The prepared anti-reflective materials have significant application prospects in the field of intelligent optoelectronic devices due to the controllability of atomic layer deposition (ALD) and phase transition characteristics of VO.
低反射率对光电器件、光学显示器、太阳能电池、光催化等领域具有重要意义。本文通过原子层沉积法将氧化钒沉积在图案化的SiO上，然后进行退火处理，以表征和分析其抗反射效果。扫描电子显微镜（SEM）图像表明，沉积态的VO薄膜具有均匀性和可控性的优点。经过退火处理后，与伴随的平面SiO衬底上的VO相比，VO@图案化SiO的缝隙更少。拉曼结果表明，沉积在图案化SiO上的VO中存在微小的均匀应力，这稀释了结晶过程的收缩行为。光学反射光谱表明，沉积态的VO@图案化SiO由于捕获效应和有效介质理论的联合机制而具有抗反射效果。经过退火处理后，在650 - 1355 nm的可见近红外波长范围内，加权平均反射率降至1.46%，其中绝对反射率小于2%。由于退火产生的微小裂纹引起的多重散射效应，VO@图案化SiO的抗反射效果优于VO@图案化SiO。超低反射频域达到705 nm，最低绝对反射率出现在1000 nm处，值为0.86%，令人惊讶。由于原子层沉积（ALD）的可控性和VO的相变特性，所制备的抗反射材料在智能光电器件领域具有显著的应用前景。
