National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China.
Kuang Yaming Honors School and Institute for Brain Sciences, Nanjing University, Nanjing 210023, P. R. China.
J Phys Chem Lett. 2023 Feb 16;14(6):1389-1394. doi: 10.1021/acs.jpclett.2c03850. Epub 2023 Feb 2.
An organic-inorganic hybrid resistive random-access memory based on a nanoporous zinc-based hydroquinone (Zn-HQ) thin film has been constructed with a Pt/Zn-HQ/Ag sandwich structure. The porous Zn-HQ functional layer was directly fabricated by a one-step molecular layer deposition. These Pt/Zn-HQ/Ag devices show a typical electroforming-free bipolar resistive switching characteristic with lower operation voltages and higher on/off ratio above 10. Our nanoporous hybrid devices can also realize multilevel storage capability and exhibit excellent endurance/retention properties. The connection and disconnection of Ag conductive filaments in nanoporous Zn-HQ thin film follow the electrochemical metallization mechanism. Our computational simulations confirm that the existence of nanopores in Zn-HQ thin films facilitates the Ag filament formation, contributing to the high performance of our hybrid devices.
基于具有 Pt/Zn-HQ/Ag 三明治结构的纳米多孔锌基对苯二酚（Zn-HQ）薄膜，构建了一种有机-无机混合阻变随机存取存储器。多孔 Zn-HQ 功能层通过一步分子层沉积直接制备。这些 Pt/Zn-HQ/Ag 器件表现出典型的无需电成型的双极性阻变开关特性，具有较低的工作电压和高于 10 的较高导通/关断比。我们的纳米多孔混合器件还可以实现多级存储能力，并表现出优异的耐久性/保持特性。纳米多孔 Zn-HQ 薄膜中 Ag 导电丝的连接和断开遵循电化学金属化机制。我们的计算模拟证实，Zn-HQ 薄膜中纳米孔的存在有利于 Ag 细丝的形成，这有助于提高我们混合器件的性能。
