Jiang Changjun, Wu Lei, Wei WenWen, Dong Chunhui, Yao Jinli
Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China.
Nanoscale Res Lett. 2014 Oct 21;9(1):584. doi: 10.1186/1556-276X-9-584. eCollection 2014.
A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.
68.37.-d; 73.40.Rw; 73.61.-r.
基于纳米多孔阳极氧化铝模板,研究了一种用于电阻式随机存取存储器单元的新型导电工艺。在CoFe2O4薄膜中清晰观察到双极电阻开关特性。同时获得了稳定且可重复的电阻开关行为。基于导电细丝模型,深入讨论了电阻开关行为可能的产生机制。此外,对样品(退火前后)的磁性进行了表征,检测到磁各向异性和矫顽场的明显变化。目前的结果为理解电阻开关效应的潜在物理起源提供了新的视角。
68.37.-d;73.40.Rw;73.61.-r。