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半导体中纳米级电荷动力学的超快电子显微镜

Ultrafast Electron Microscopy of Nanoscale Charge Dynamics in Semiconductors.

作者信息

Yannai Michael, Dahan Raphael, Gorlach Alexey, Adiv Yuval, Wang Kangpeng, Madan Ivan, Gargiulo Simone, Barantani Francesco, Dias Eduardo J C, Vanacore Giovanni Maria, Rivera Nicholas, Carbone Fabrizio, García de Abajo F Javier, Kaminer Ido

机构信息

Technion - Israel Institute of Technology, Haifa 3200003, Israel.

Institute of Physics, École Polytechnique Fédérale de Lausanne, Station 6, Lausanne 1015, Switzerland.

出版信息

ACS Nano. 2023 Feb 28;17(4):3645-3656. doi: 10.1021/acsnano.2c10481. Epub 2023 Feb 3.

Abstract

The ultrafast dynamics of charge carriers in solids plays a pivotal role in emerging optoelectronics, photonics, energy harvesting, and quantum technology applications. However, the investigation and direct visualization of such nonequilibrium phenomena remains as a long-standing challenge, owing to the nanometer-femtosecond spatiotemporal scales at which the charge carriers evolve. Here, we propose and demonstrate an interaction mechanism enabling nanoscale imaging of the femtosecond dynamics of charge carriers in solids. This imaging modality, which we name charge dynamics electron microscopy (CDEM), exploits the strong interaction of free-electron pulses with terahertz (THz) near fields produced by the moving charges in an ultrafast scanning transmission electron microscope. The measured free-electron energy at different spatiotemporal coordinates allows us to directly retrieve the THz near-field amplitude and phase, from which we reconstruct movies of the generated charges by comparison to microscopic theory. The CDEM technique thus allows us to investigate previously inaccessible spatiotemporal regimes of charge dynamics in solids, providing insight into the photo-Dember effect and showing oscillations of photogenerated electron-hole distributions inside a semiconductor. Our work facilitates the exploration of a wide range of previously inaccessible charge-transport phenomena in condensed matter using ultrafast electron microscopy.

摘要

固体中电荷载流子的超快动力学在新兴的光电子学、光子学、能量收集和量子技术应用中起着关键作用。然而,由于电荷载流子演化所处的纳米-飞秒时空尺度,对这种非平衡现象的研究和直接可视化仍然是一个长期挑战。在此,我们提出并演示了一种相互作用机制,能够对固体中电荷载流子的飞秒动力学进行纳米级成像。这种成像方式,我们称之为电荷动力学电子显微镜(CDEM),它利用超快扫描透射电子显微镜中自由电子脉冲与移动电荷产生的太赫兹(THz)近场之间的强相互作用。在不同时空坐标处测量的自由电子能量使我们能够直接获取太赫兹近场的振幅和相位,通过与微观理论比较,我们据此重建产生电荷的动态图像。因此,CDEM技术使我们能够研究固体中以前无法触及的电荷动力学时空区域,深入了解光-丹伯效应,并展示半导体内部光生电子-空穴分布的振荡。我们的工作有助于利用超快电子显微镜探索凝聚态物质中广泛存在的以前无法触及的电荷传输现象。

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