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石墨烯辅助衰减电荷转移对远程外延异质界面的调制

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer.

作者信息

Wang Yuning, Qu Yipu, Xu Yu, Li Didi, Lu Zhengqian, Li Jianjie, Su Xujun, Wang Guobin, Shi Lin, Zeng Xionghui, Wang Jianfeng, Cao Bing, Xu Ke

机构信息

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China.

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China.

出版信息

ACS Nano. 2023 Feb 28;17(4):4023-4033. doi: 10.1021/acsnano.3c00026. Epub 2023 Feb 6.

DOI:10.1021/acsnano.3c00026
PMID:36744849
Abstract

Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.

摘要

远程外延(RE)中,衬底极性能够“穿透”二维材料(2DMs)并作用于外延层,展现出一种具有前景的通用生长策略。然而,从本质上讲,二维材料在远程外延中所起的作用至今尚未得到深入研究。在此,通过在最弱极性/离子性衬底上实现单晶薄膜的远程外延,以揭示其本质物理特性。石墨烯有助于从衬底到外延层的衰减电荷转移(ACT),从而构建远程相互作用。界面原子通过石墨烯组装成“失配”外延关系,以减少外延层中的失配位错。此外,石墨烯降低了原子迁移势垒,导致倾向于“逐层”生长模式。这种薄膜生长模式与传统外延(CE)不同,有利于外延层的快速生长以及合并边界处位错的减少。对石墨烯作用的深刻揭示揭示了远程外延的界面物理,并为利用二维材料扩展三维材料(3DMs)以应用于器件提供了更有价值的指导。

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