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通过钼簇碘化物前驱体的硫化增强钼簇 - 硫化钼纳米复合薄膜的氨气传感性能

Enhanced NH Sensing Performance of Mo Cluster-MoS Nanocomposite Thin Films via the Sulfurization of Mo Cluster Iodides Precursor.

作者信息

Zhang Meiqi, Grasset Fabien, Masubuchi Yuji, Shimada Toshihiro, Nguyen Thi Kim Ngan, Dumait Noée, Renaud Adèle, Cordier Stéphane, Berthebaud David, Halet Jean-François, Uchikoshi Tetsuo

机构信息

Graduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, Japan.

Research Center for Functional Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan.

出版信息

Nanomaterials (Basel). 2023 Jan 24;13(3):478. doi: 10.3390/nano13030478.

Abstract

The high-performance defect-rich MoS dominated by sulfur vacancies as well as Mo-rich environments have been extensively studied in many fields, such as nitrogen reduction reactions, hydrogen evolution reactions, as well as sensing devices for NH, which are attributed to the under-coordinated Mo atoms playing a significant role as catalytic sites in the defect area. In this study, the Mo cluster-MoS composite was creatively synthesized through a one-step sulfurization process via H/HS gas flow. The Mo cluster iodides (MIs) coated on the fluorine-doped tin oxide (FTO) glass substrate via the electrophoretic deposition method (i.e., MI@FTO) were used as a precursor to form a thin-film nanocomposite. Investigations into the structure, reaction mechanism, and NH gas sensing performance were carried out in detail. The results indicated that during the gas flowing, the decomposed Mo cluster iodides played the role of template and precursor, forming complicated Mo cluster compounds and eventually producing MoS. These Mo cluster-MoS thin-film nanocomposites were fabricated and applied as gas sensors for the first time. It turns out that after the sulfurization process, the response of MI@FTO for NH gas increased three times while showing conversion from p-type to n-type semiconductor, which enhances their possibilities for future device applications.

摘要

以硫空位以及富钼环境为主导的高性能富缺陷二硫化钼已在许多领域得到广泛研究,如氮还原反应、析氢反应以及用于检测氨气的传感装置,这归因于欠配位的钼原子在缺陷区域作为催化位点发挥着重要作用。在本研究中,通过一步硫化工艺,利用氢气/硫化氢气流创造性地合成了钼簇-二硫化钼复合材料。通过电泳沉积法(即钼簇碘化物@氟掺杂氧化锡)涂覆在氟掺杂氧化锡(FTO)玻璃基板上的钼簇碘化物(MIs)被用作前驱体,以形成薄膜纳米复合材料。对其结构、反应机理和氨气传感性能进行了详细研究。结果表明,在气体流动过程中,分解的钼簇碘化物起到模板和前驱体的作用,形成复杂的钼簇化合物,最终生成二硫化钼。这些钼簇-二硫化钼薄膜纳米复合材料首次被制备并用作气体传感器。结果表明,硫化过程后,钼簇碘化物@氟掺杂氧化锡对氨气的响应增加了三倍,同时显示出从p型半导体向n型半导体的转变,这增加了它们在未来器件应用中的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ed1b/9921185/fdc17625f8a5/nanomaterials-13-00478-g001.jpg

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