Lee Hyuna, Kim Yeo Eun, Bae Jisuk, Jung Sungyeop, Sporea Radu A, Kim Chang-Hyun
School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea.
ACS Appl Mater Interfaces. 2023 Mar 1;15(8):10918-10925. doi: 10.1021/acsami.2c22350. Epub 2023 Feb 17.
Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.
源极栅控晶体管是低功耗高增益薄膜电子学的新驱动力。然而，基于有机半导体的源极栅控晶体管尽管在未来显示和传感器技术方面具有潜力，但尚未得到广泛研究。我们报道了利用氧化铟锡和二酮吡咯并吡咯聚合物之间形成的关键结制造和建模高性能有机源极栅控晶体管的情况。这种部分阻挡的空穴注入界面显示出既能提供足够水平的漏极电流，又能提供源极夹断所需的强耗尽效应。结果，我们的晶体管展现出一系列出色的指标，包括在5V工作电压下160V/V的本征增益、4.6GΩ的输出电阻和0.2的饱和系数。采用漂移扩散模拟来重现和合理化实验数据。建模表明，在叉指电极几何结构中有效接触长度显著减小，最终有助于实现低电压饱和。
