Lunca-Popa Petru, Chemin Jean-Baptiste, Adjeroud Noureddine, Kovacova Veronika, Glinsek Sebastjan, Valle Nathalie, El Hachemi Mohamed, Girod Stéphanie, Bouton Olivier, Maris Jérôme Polesel
Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg.
ACS Omega. 2023 Jan 30;8(6):5475-5485. doi: 10.1021/acsomega.2c06574. eCollection 2023 Feb 14.
Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm) and enhanced charge mobilities (18 cm V s). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas' performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD.
采用射频磁控溅射和原子层沉积（ALD）技术制备了镓掺杂氧化锌（GZO）薄膜。后者具有更高的电导率（高达2700 S/cm）和增强的电荷迁移率（18 cm²/V·s）。形态分析表明，差异主要源于沉积过程的本质截然不同。通过ALD沉积的薄膜在可见光范围内的透过率增加，而在红外范围内的透过率非常小，这导致其品质因数为0.009 Ω（比通过溅射沉积的薄膜高10倍）。与工业上常规使用的射频溅射铟掺杂氧化锡（ITO）薄膜进行了基准测试。还对通过ALD制备的ZnO、Al:ZnO（AZO）和Ga:ZnO（GZO）薄膜进行了另一项比较，并证明了物理性能随掺杂的演变。最后，我们将玻璃基板上的GZO薄膜加工成图案化透明贴片天线，以展示通过蓝牙低功耗（BLE）协议进行短程通信的应用案例。将GZO透明天线的性能与玻璃基板上的参考ITO天线以及FR4印刷电路板上的传统铜天线进行了比较。结果突出了使用透明GZO天线进行可靠短程通信的可能性，以及完全通过ALD加工天线的可实现性。
