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钙钛矿/量子点异质结构的远红外层激子。

Far-Red Interlayer Excitons of Perovskite/Quantum-Dot Heterostructures.

机构信息

Department of Physics, Korea University, Seoul, 02841, Republic of Korea.

Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

出版信息

Adv Sci (Weinh). 2023 May;10(14):e2207653. doi: 10.1002/advs.202207653. Epub 2023 Mar 20.

Abstract

Interlayer excitons (IXs) at the interface of heterostructures (HSs) with a staggered band alignment are fascinating quantum quasi-particles with light-emitting and long-lifetime characteristics. In this study, the energy band alignments (EBAs) of the HS of MAPbI perovskite thin sheets with CdSe-ZnS core-shell quantum dot (QD) layers are modulated by using different diameters of the QDs. Far-red IX emission is observed at 1.42 eV from the HS of MAPbI /CdSe-ZnS-QD (λ  = 645 nm) with type-II EBA owing to charge transfer. The lifetime of the far-red IXs is estimated to be 5.68 µs, which is considerably longer than that (0.715 ns) of the intralayer excitons from CdSe-ZnS-QD. With increasing incident excitation power, the PL peak and its intensity of IXs are blue-shifted and linearly increased, respectively, indicating a strong dipole alignment of far-red IXs at the heterojunction. Back focal plane imaging suggests that the directions of dipole moments of the IXs are relatively out-of-plane compared to those of the intralayer excitons (MAPbI and CdSe-ZnS-QD). Notably, the abnormal behavior of the optical characteristics is observed near the phase transition temperature (90 K) of MAPbI . MAPbI /CdSe-ZnS-QD HS photodetectors show the increase in photocurrent and detectivity compared to MAPbI at IX excitation.

摘要

层间激子(IXs)在具有交错能带排列的异质结构(HS)界面上是令人着迷的量子准粒子,具有发光和长寿命的特点。在这项研究中,通过使用不同直径的量子点来调制 MAPbI 钙钛矿薄片与 CdSe-ZnS 核壳量子点(QD)层的 HS 的能带排列(EBA)。由于电荷转移,来自 MAPbI/CdSe-ZnS-QD(λ=645nm)的 HS 观察到 1.42eV 的远红 IX 发射,其具有 II 型 EBA。远红 IX 的寿命估计为 5.68µs,比 CdSe-ZnS-QD 的层内激子的寿命(0.715ns)长得多。随着入射激发功率的增加,PL 峰及其 IX 强度分别蓝移和线性增加,表明异质结处远红 IX 的强偶极排列。背焦面成像表明,与层内激子(MAPbI 和 CdSe-ZnS-QD)相比,IX 的偶极矩方向相对出平面。值得注意的是,在 MAPbI 的相变温度(90K)附近观察到光学特性的异常行为。与 MAPbI 相比,IX 激发时,MAPbI/CdSe-ZnS-QD HS 光电探测器的光电流和探测率均增加。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/84da/10190583/0331b354f82c/ADVS-10-2207653-g001.jpg

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