Li Chunyang, Li Lu, Zhang Fanqing, Li Zhongyi, Zhu Wenfu, Dong Lixin, Zhao Jing
School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, Beijing 100081, China.
ACS Appl Mater Interfaces. 2023 Apr 5;15(13):16910-16917. doi: 10.1021/acsami.3c02610. Epub 2023 Mar 26.
Nonvolatile memory (NVM) devices based on two-dimensional (2D) materials have recently attracted widespread attention due to their high-density integration potential and the ability to be applied in computing-in-memory systems in the post-Moore era. Considering the high current on/off ratio, programmable threshold voltage, nonvolatile multilevel memory state, and extended logic functions, plenty of breakthroughs related to ferroelectric field-effect transistors (FeFETs), one of the most important NVM devices, have been made in the past decade. Among them, FETs coupled with organic ferroelectric films such as P(VDF-TrFE) displayed properties of remarkable robustness, easy preparation, and low cost. However, the dipoles of the P(VDF-TrFE) film cannot be flipped smoothly at low voltage, impeding the further application of organic FeFET. In this paper, we proposed a high-performance FeFET based on monolayer MoS coupled with C doped ferroelectric copolymer P(VDF-TrFE). The inserted C molecules enhanced the alignment of the dipoles effectively at low voltage, allowing the modified device to demonstrate a large memory window (∼16 V), high current on/off ratio (>10), long retention time (>10 000 s), and remarkable endurance under the reduced operating voltage. In addition, the in situ logic application can be realized by constructing facile device interconnection without building complex complementary semiconductor circuits. Our results are expected to pave the way for future low-consumption computing-in-memory applications based on high-quality 2D FeFETs.
基于二维（2D）材料的非易失性存储器（NVM）器件，因其具有高密度集成潜力以及能够应用于后摩尔时代的存内计算系统，近来受到了广泛关注。考虑到高电流开关比、可编程阈值电压、非易失性多电平存储状态以及扩展逻辑功能，在过去十年中，作为最重要的NVM器件之一的铁电场效应晶体管（FeFET）取得了诸多突破。其中，与诸如P（VDF-TrFE）等有机铁电薄膜耦合的场效应晶体管展现出了卓越的稳健性、易于制备以及低成本等特性。然而，P（VDF-TrFE）薄膜的偶极子在低电压下无法顺利翻转，这阻碍了有机FeFET的进一步应用。在本文中，我们提出了一种基于单层MoS与碳掺杂铁电共聚物P（VDF-TrFE）耦合的高性能FeFET。插入的碳分子在低电压下有效增强了偶极子的排列，使得改进后的器件展现出大存储窗口（约16V）、高电流开关比（>10）、长保持时间（>10000s）以及在降低的工作电压下具有出色的耐久性。此外，通过构建简便的器件互连而无需构建复杂的互补半导体电路，即可实现原位逻辑应用。我们的研究结果有望为未来基于高质量二维FeFET的低功耗存内计算应用铺平道路。
