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恶劣环境下SCR器件的静电放电研究

ESD Research of SCR Devices under Harsh Environments.

作者信息

Lin Chien-Chun, Lin Chun-Yu

机构信息

Department of Electrical Engineering, National Taiwan Normal University, Taipei City 106, Taiwan.

出版信息

Materials (Basel). 2023 Sep 13;16(18):6182. doi: 10.3390/ma16186182.

DOI:10.3390/ma16186182
PMID:37763460
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10532737/
Abstract

In prior technology, system-level electrostatic discharge (ESD) tests under environment change conditions mainly focused on testing the effect of a high-temperature environment. i.e., the effect on internal circuits of heat generated outside. However, few studies have explored the effect of ambient relative humidity changes on integrated circuits (ICs). Therefore, this study will analyze the performance of various ESD protection components under high ambient temperature and high ambient relative humidity. The ESD protection devices are tested for the ESD robustness of the silicon-controlled rectifiers (SCR) under a harsh environment and the measurement results are discussed and verified in the CMOS process.

摘要

在现有技术中,环境变化条件下的系统级静电放电(ESD)测试主要集中在测试高温环境的影响,即外部产生的热量对内部电路的影响。然而,很少有研究探讨环境相对湿度变化对集成电路(IC)的影响。因此,本研究将分析各种ESD保护组件在高环境温度和高环境相对湿度下的性能。对ESD保护器件在恶劣环境下的可控硅整流器(SCR)的ESD鲁棒性进行测试,并在CMOS工艺中对测量结果进行讨论和验证。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/113ba31185c2/materials-16-06182-g015.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/a02a3b5526c9/materials-16-06182-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/2fa3d7d7a04f/materials-16-06182-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/293bd86df073/materials-16-06182-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/563f32595d9e/materials-16-06182-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/22cb2cfbe732/materials-16-06182-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/ed7c0e7c549e/materials-16-06182-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/0aacb080e40b/materials-16-06182-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/83995f175606/materials-16-06182-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/9614881bcc94/materials-16-06182-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/4eab05787cb9/materials-16-06182-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/a02a3b5526c9/materials-16-06182-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/f5de7be4b9a8/materials-16-06182-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/1c1b971563cd/materials-16-06182-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab06/10532737/113ba31185c2/materials-16-06182-g015.jpg

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本文引用的文献

1
π-Shape ESD Protection Design for Multi-Gbps High-Speed Circuits in CMOS Technology.基于CMOS技术的多Gbps高速电路的π形ESD保护设计
Materials (Basel). 2023 Mar 23;16(7):2562. doi: 10.3390/ma16072562.
2
Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit.用于2.5V纳米集成电路的超低压触发可控硅整流器静电放电保护器件
Nanomaterials (Basel). 2022 Nov 29;12(23):4250. doi: 10.3390/nano12234250.
3
Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection.
用于7纳米鳍式场效应晶体管工艺静电放电保护的嵌入式可控硅整流二极管。
Nanomaterials (Basel). 2022 May 19;12(10):1743. doi: 10.3390/nano12101743.