Kim Sunjae, Kim Minje, Kim Jihyun, Hwang Wan Sik
Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea.
Department of Smart Air Mobility, Korea Aerospace University, Goyang 10540, Republic of Korea.
Nanomaterials (Basel). 2023 Mar 28;13(7):1199. doi: 10.3390/nano13071199.
The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including -GaO. In this study, the effects of plasma nitridation (PN) on polycrystalline -GaO thin films are discussed. In detail, the electrical and optical properties of polycrystalline -GaO thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline -GaO thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.
半导体器件的电学和光电性能主要受半导体中缺陷或晶体不完美之处的影响。氧空位是最常见的缺陷之一，已知其作为电子陷阱位点，对于包括β-Ga₂O₃在内的金属氧化物半导体，其能级低于导带（CB）边缘。在本研究中，讨论了等离子体氮化（PN）对多晶β-Ga₂O₃薄膜的影响。详细而言，比较了多晶β-Ga₂O₃薄膜在不同PN处理时间下的电学和光学性质。结果表明，对多晶β-Ga₂O₃薄膜进行PN处理可有效减少电子陷阱位点。这种PN处理技术可提高电子学和光电子学器件的性能。
