Quantum Technologies Research Center (QTRC), Science and Research Branch, Islamic Azad University, Tehran, Iran.
Physics Department, West Tehran Branch, Islamic Azad University, Tehran, Iran.
Sci Rep. 2023 Apr 21;13(1):6518. doi: 10.1038/s41598-023-33713-y.
Due to the large number of industrial applications of transparent conductive oxides (TCOs), this study focuses on one of the most important metal oxides. The RF-magnetron sputtering method was used to fabricate NiO thin films on both quartz and silicon substrates at room temperature under flow of Argon and Oxygen. The sputtered samples were annealed in N atmosphere at 400, 500, and 600 °C for 2 hours. Using the AFM micrographs and WSXM 4.0 software, the basic surface parameters, including root mean square roughness, average roughness, kurtosis, skewness, etc., were computed. Advanced surface parameters were obtained by the Shannon entropy through a developed algorithm, and the power spectral density and fractal succolarity were extracted by related methods. Optical properties were studied using a transmittance spectrum to achieve the optical bandgap, absorption coefficient, Urbach energy, and other optical parameters. Photoluminescence properties also showed interesting results in accordance with optical properties. Finally, electrical characterizations and I-V measurements of the NiO/Si heterojunction device demonstrated that it can be used as a good diode device.
由于透明导电氧化物 (TCO) 在工业上的大量应用，本研究集中在最重要的金属氧化物之一。采用射频磁控溅射法在石英和硅衬底上于室温下在氩气和氧气流下制备 NiO 薄膜。溅射样品在 N 气氛中于 400、500 和 600°C 下退火 2 小时。使用 AFM 形貌图和 WSXM 4.0 软件，计算了基本表面参数，包括均方根粗糙度、平均粗糙度、峰度、偏度等。通过开发的算法从 Shannon 熵中获得高级表面参数，并通过相关方法提取功率谱密度和分形复杂度。通过透射谱研究光学性质以获得光学带隙、吸收系数、Urbach 能等光学参数。光致发光性质也与光学性质一致，显示出有趣的结果。最后，NiO/Si 异质结器件的电特性和 I-V 测量表明，它可用作良好的二极管器件。
