Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.
Phys Rev Lett. 2023 Apr 21;130(16):166902. doi: 10.1103/PhysRevLett.130.166902.
Neutral silicon vacancy centers (SiV^{0}) in diamond are promising candidates for quantum applications; however, stabilizing SiV^{0} requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV^{0} centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV^{0} centers, as well as charge state engineering of other defects.
金刚石中的中性硅空位中心（SiV^{0}）是量子应用的有前途的候选者；然而，SiV^{0}的稳定需要高纯度的掺硼金刚石，而这种材料并不容易获得。在这里，我们通过对金刚石表面的化学控制展示了一种替代方法。我们使用低损伤的化学处理和在氢气环境中的退火，在未掺杂的金刚石中实现了可逆和高度稳定的电荷状态调谐。由此产生的 SiV^{0}中心显示出光探测磁共振和块状光学性质。通过表面终止来控制电荷状态调谐为基于 SiV^{0}中心的可扩展技术以及其他缺陷的电荷状态工程提供了一种途径。
