硅中电信色心的电学操控。

Electrical manipulation of telecom color centers in silicon.

作者信息

Day Aaron M, Sutula Madison, Dietz Jonathan R, Raun Alexander, Sukachev Denis D, Bhaskar Mihir K, Hu Evelyn L

机构信息

John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.

Department of Physics, Harvard University, Cambridge, MA, 02138, USA.

出版信息

Nat Commun. 2024 Jun 3;15(1):4722. doi: 10.1038/s41467-024-48968-w.

DOI:10.1038/s41467-024-48968-w

PMID:38830869

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11148098/

Abstract

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

摘要

硅色心最近已成为商业量子技术的有前途的候选者，但其与电场的相互作用尚未得到研究。在本文中，我们通过在商用绝缘体上硅晶圆中实现具有集成G中心系综的新型横向电二极管，展示了对电信硅色心的电操纵。在反向偏置直流电场的作用下，对系综光学响应进行了表征，观察到荧光信号的100%调制，以及在阈值电压以上约1.24±0.08 GHz/V的波长红移。最后，我们使用G中心荧光直接成像器件内的电场分布，深入了解结耗尽区的空间和电压依赖性变化以及对系综的相关中介效应。观察到发射体-场耦合与产生的光电流之间有很强的相关性。我们的演示实现了对半导体量子发射体的电控制和稳定。