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通过电化学实现溶液加工范德华异质结构的高通量合成。

High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry.

机构信息

Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany.

Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.

出版信息

Angew Chem Int Ed Engl. 2023 Jul 10;62(28):e202303929. doi: 10.1002/anie.202303929. Epub 2023 Jun 6.

Abstract

Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In Se vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W ), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In Se , graphene/MoS and graphene/MoSe vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.

摘要

二维范德华异质结(2D vdWHs)因其丰富而奇特的性质而引起了广泛的关注,为下一代纳米电子学开辟了许多新的可能性。然而,由于缺乏制造高质量 vdWHs 的高通量技术,实际应用仍然具有挑战性。在这里,我们展示了一种通用的电化学策略来制备溶液处理的高质量 vdWHs,其中静电力驱动电化学剥离的单个组件的堆叠,这些组件具有完整的结构和干净的界面,形成具有强层间相互作用的 vdWHs。由于单个层中强光吸收、界面电荷转移和良好的电荷输运特性的出色结合,基于石墨烯/In Se vdWHs 的薄膜光电探测器在近红外(NIR)光探测方面表现出很大的潜力,因为在 NIR 光照射下具有高响应度(267 mA·W -1 )、快速上升(72 ms)和下降(426 ms)时间。这种方法能够实现各种混合系统,包括石墨烯/In Se 、石墨烯/MoS 2 和石墨烯/MoSe 2 vdWHs,为探索新兴的电子、光子和奇特的量子现象提供了广阔的途径。

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