Nizar Ben Moussa, Lajnef Mohamed, Chaste Julien, Chtourou Radouane, Herth Etienne
Centre de Nanosciences et de Nanotechnologies, CNRS UMR 9001, Univ. Paris-Sud, Université Paris-Saclay Palaiseau 91120 France
Laboratory of Nanomaterials and Renewable Energy Systems, LANSER, Research and Technology Center of Energy, Borj-Cedria Science and Technology Park BP 95 Hammam-Lif 2050 Tunisia.
RSC Adv. 2023 May 16;13(22):15077-15085. doi: 10.1039/d3ra01511d. eCollection 2023 May 15.
Nanowires are widely used for energy harvesting, sensors, and solar cells. We report a study on the role of buffer layer in the growth of zinc oxide (ZnO) nanowires (NWs) synthesised by a chemical bath deposition (CBD) method. To control the thickness of the buffer layer, multilayer coatings corresponding to one layer (100 nm thick), three layers (300 nm thick), and six layers (600 nm thick) of ZnO sol-gel thin-films were used. The evolution of the morphology and structure of ZnO NWs was characterized by scanning electron microscopy, X-ray diffraction, photoluminescence, and Raman spectroscopy. Highly C-oriented ZnO (002)-oriented NWs were obtained on both substrates, silicon and ITO, when the thickness of the buffer layer was increased. The role of ZnO sol-gel thin films used as a buffer layer for the growth of ZnO NWs with (002)-oriented grains also resulted in a significant change in surface morphology on both substrates. The successful deposition of ZnO NWs on a variety of substrates, as well as the promising results, open up a wide range of applications.
纳米线广泛应用于能量收集、传感器和太阳能电池领域。我们报道了一项关于缓冲层在通过化学浴沉积（CBD）法合成的氧化锌（ZnO）纳米线（NWs）生长过程中作用的研究。为了控制缓冲层的厚度，使用了对应于一层（100纳米厚）、三层（300纳米厚）和六层（600纳米厚）ZnO溶胶 - 凝胶薄膜的多层涂层。通过扫描电子显微镜、X射线衍射、光致发光和拉曼光谱对ZnO NWs的形态和结构演变进行了表征。当缓冲层厚度增加时，在硅和ITO这两种衬底上均获得了高度C取向的ZnO（002）取向的NWs。用作具有（002）取向晶粒的ZnO NWs生长缓冲层的ZnO溶胶 - 凝胶薄膜的作用，也导致了两种衬底表面形态的显著变化。ZnO NWs在各种衬底上的成功沉积以及取得的有前景的结果，开辟了广泛的应用领域。
