Fiorentini Simone, Jørstad Nils Petter, Ender Johannes, de Orio Roberto Lacerda, Selberherr Siegfried, Bendra Mario, Goes Wolfgang, Sverdlov Viktor
Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Micromachines (Basel). 2023 Apr 22;14(5):898. doi: 10.3390/mi14050898.
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in improving the design of MRAM cells. In this work, we describe a solver based on the finite element implementation of the Landau-Lifshitz-Gilbert equation coupled to the spin and charge drift-diffusion formalism. The torque acting in all layers from different contributions is computed from a unified expression. In consequence of the versatility of the finite element implementation, the solver is applied to switching simulations of recently proposed structures based on spin-transfer torque, with a double reference layer or an elongated and composite free layer, and of a structure combining spin-transfer and spin-orbit torques.
由于其非易失性和简单的结构，近年来对磁阻随机存取存储器（MRAM）器件的兴趣一直在稳步增长。可靠的模拟工具能够处理由多种材料组成的复杂几何形状，为改进MRAM单元的设计提供了有价值的帮助。在这项工作中，我们描述了一种基于朗道-里夫希茨-吉尔伯特方程有限元实现的求解器，该方程与自旋和电荷漂移-扩散形式主义相结合。从一个统一的表达式计算出不同贡献在所有层中作用的转矩。由于有限元实现的通用性，该求解器被应用于基于自旋转移转矩的最近提出的结构的开关模拟，这些结构具有双参考层或细长复合自由层，以及一种结合了自旋转移和自旋轨道转矩的结构。
