Spin and charge drift-diffusion in ultra-scaled MRAM cells.

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis approach successfully used in nanoscale metallic spin valves to MTJs by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current. The experimentally measured voltage and angle dependencies of the torques acting on the free layer are thereby accurately reproduced. The switching behavior of ultra-scaled MRAM cells is in agreement with recent experiments on shape-anisotropy MTJs. Using our extended approach is absolutely essential to accurately capture the interplay of the Slonczewski and Zhang-Li torque contributions acting on a textured magnetization in composite free layers with the inclusion of several MgO barriers.