Institute for Biochemistry and Biology, University of Potsdam, 14476, Potsdam, Germany.
Genome Biol. 2023 May 30;24(1):129. doi: 10.1186/s13059-023-02970-5.
Transcriptional regulation is a key aspect of environmental stress responses. Heat stress induces transcriptional memory, i.e., sustained induction or enhanced re-induction of transcription, that allows plants to respond more efficiently to a recurrent HS. In light of more frequent temperature extremes due to climate change, improving heat tolerance in crop plants is an important breeding goal. However, not all heat stress-inducible genes show transcriptional memory, and it is unclear what distinguishes memory from non-memory genes. To address this issue and understand the genome and epigenome architecture of transcriptional memory after heat stress, we identify the global target genes of two key memory heat shock transcription factors, HSFA2 and HSFA3, using time course ChIP-seq.
HSFA2 and HSFA3 show near identical binding patterns. In vitro and in vivo binding strength is highly correlated, indicating the importance of DNA sequence elements. In particular, genes with transcriptional memory are strongly enriched for a tripartite heat shock element, and are hallmarked by several features: low expression levels in the absence of heat stress, accessible chromatin environment, and heat stress-induced enrichment of H3K4 trimethylation. These results are confirmed by an orthogonal transcriptomic data set using both de novo clustering and an established definition of memory genes.
Our findings provide an integrated view of HSF-dependent transcriptional memory and shed light on its sequence and chromatin determinants, enabling the prediction and engineering of genes with transcriptional memory behavior.
转录调控是环境应激反应的一个关键方面。热应激诱导转录记忆,即转录的持续诱导或增强再诱导,使植物能够更有效地应对反复的热胁迫。鉴于气候变化导致的温度极端情况更加频繁,提高作物的耐热性是一个重要的育种目标。然而,并非所有热诱导基因都表现出转录记忆,并且不清楚是什么将记忆基因与非记忆基因区分开来。为了解决这个问题,并了解热应激后转录记忆的基因组和表观基因组结构,我们使用时间过程 ChIP-seq 来鉴定两个关键记忆热休克转录因子 HSFA2 和 HSFA3 的全球靶基因。
HSFA2 和 HSFA3 显示出几乎相同的结合模式。体外和体内结合强度高度相关,表明 DNA 序列元件的重要性。特别是,具有转录记忆的基因强烈富集三聚体热休克元件,并具有几个特征:在没有热应激的情况下表达水平低、染色质环境可及性以及热应激诱导的 H3K4 三甲基化富集。这些结果通过使用从头聚类和已建立的记忆基因定义的正交转录组数据集得到了证实。
我们的研究结果提供了 HSF 依赖性转录记忆的综合视图,并揭示了其序列和染色质决定因素,为具有转录记忆行为的基因的预测和工程提供了依据。