He Yuli, Zheng Guang, Zhu Bao, Wu Xiaohan, Liu Wen-Jun, Zhang David Wei, Ding Shi-Jin
School of Microelectronics, Fudan University, Shanghai 200433, China.
Jiashan Fudan Institute, Jiaxing 314100, China.
Nanomaterials (Basel). 2023 May 30;13(11):1765. doi: 10.3390/nano13111765.
Concurrently achieving high energy storage density (ESD) and efficiency has always been a big challenge for electrostatic energy storage capacitors. In this study, we successfully fabricate high-performance energy storage capacitors by using antiferroelectric (AFE) Al-doped HfZrO (HfZrO:Al) dielectrics together with an ultrathin (1 nm) HfZrO underlying layer. By optimizing the Al concentration in the AFE layer with the help of accurate controllability of the atomic layer deposition technique, an ultrahigh ESD of 81.4 J cm and a perfect energy storage efficiency (ESE) of 82.9% are simultaneously achieved for the first time in the case of the Al/(Hf + Zr) ratio of 1/16. Meanwhile, both the ESD and ESE exhibit excellent electric field cycling endurance within 10 cycles under 5~5.5 MV cm, and robust thermal stability up to 200 °C. Thus, the fabricated capacitor is very promising for on-chip energy storage applications due to favorable integratability with the standard complementary metal-oxide-semiconductor (CMOS) process.
同时实现高储能密度（ESD）和效率一直是静电储能电容器面临的一大挑战。在本研究中，我们通过使用反铁电（AFE）Al掺杂的HfZrO（HfZrO:Al）电介质以及超薄（1 nm）的HfZrO底层，成功制造出了高性能储能电容器。借助原子层沉积技术的精确可控性来优化AFE层中的Al浓度，在Al/(Hf + Zr) 比例为1/16的情况下，首次同时实现了81.4 J/cm³的超高ESD和82.9%的完美储能效率（ESE）。同时，在5~5.5 MV/cm的电场下，ESD和ESE在10⁵次循环内均表现出优异的电场循环耐久性，并且在高达200 °C的温度下具有强大的热稳定性。因此，由于与标准互补金属氧化物半导体（CMOS）工艺具有良好的可集成性，所制造的电容器在片上储能应用方面极具前景。
