Bhandari Khagendra P, Sapkota Dhurba R, Jamarkattel Manoj K, Stillion Quenton, Collins Robert W
Department of Physics and Astronomy, Ohio Northern University, Ada, OH 45810, USA.
Wright Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH 43606, USA.
Nanomaterials (Basel). 2023 Jun 2;13(11):1795. doi: 10.3390/nano13111795.
Zinc oxide (ZnO) nanoparticles have shown great potential because of their versatile and promising applications in different fields, including solar cells. Various methods of synthesizing ZnO materials have been reported. In this work, controlled synthesis of ZnO nanoparticles was achieved via a simple, cost-effective, and facile synthetic method. Using transmittance spectra and film thickness of ZnO, the optical band gap energies were calculated. For as-synthesized and annealed ZnO films, the bandgap energies were found to be 3.40 eV and 3.30 eV, respectively. The nature of the optical transition indicates that the material is a direct bandgap semiconductor. Spectroscopic ellipsometry (SE) analysis was used to extract dielectric functions where the onset of optical absorption of ZnO was observed at lower photon energy due to annealing of the nanoparticle film. Similarly, X-ray diffraction (XRD) and scanning electron microscopy (SEM) data revealed that the material is pure and crystalline in nature, with the average crystallite size of ~9 nm.
氧化锌(ZnO)纳米颗粒因其在包括太阳能电池在内的不同领域具有广泛且前景广阔的应用而展现出巨大潜力。已有多种合成ZnO材料的方法被报道。在本工作中,通过一种简单、经济高效且简便的合成方法实现了ZnO纳米颗粒的可控合成。利用ZnO的透过光谱和薄膜厚度计算了光学带隙能量。对于合成态和退火后的ZnO薄膜,发现其带隙能量分别为3.40 eV和3.30 eV。光学跃迁的性质表明该材料是直接带隙半导体。使用光谱椭偏仪(SE)分析来提取介电函数,由于纳米颗粒薄膜的退火,在较低光子能量下观察到了ZnO的光吸收起始。同样,X射线衍射(XRD)和扫描电子显微镜(SEM)数据表明该材料本质上是纯净且结晶的,平均微晶尺寸约为9 nm。