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金超掺杂硅纳米层:激光加工技术及相应材料特性

Au-Hyperdoped Si Nanolayer: Laser Processing Techniques and Corresponding Material Properties.

作者信息

Kovalev Michael, Nastulyavichus Alena, Podlesnykh Ivan, Stsepuro Nikita, Pryakhina Victoria, Greshnyakov Evgeny, Serdobintsev Alexey, Gritsenko Iliya, Khmelnitskii Roman, Kudryashov Sergey

机构信息

Lebedev Physical Institute, 119991 Moscow, Russia.

School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia.

出版信息

Materials (Basel). 2023 Jun 16;16(12):4439. doi: 10.3390/ma16124439.

DOI:10.3390/ma16124439
PMID:37374622
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10300740/
Abstract

The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-hyperdoped Si has been observed. While silicon photodetectors in this range are currently being produced, their efficiency is low. Here, using the nanosecond and picosecond laser hyperdoping of thin amorphous Si films, their compositional (energy-dispersion X-ray spectroscopy), chemical (X-ray photoelectron spectroscopy), structural (Raman spectroscopy) and IR spectroscopic characterization, we comparatively demonstrated a few promising regimes of laser-based silicon hyperdoping with gold. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials has yet to be achieved, and we discuss these opportunities in light of our results.

摘要

人们已经观察到金超掺杂硅对电磁光谱近红外区域光的吸收。虽然目前正在生产该范围内的硅光电探测器,但其效率较低。在此,通过对非晶硅薄膜进行纳秒和皮秒激光超掺杂,并对其进行成分(能量色散X射线光谱)、化学(X射线光电子能谱)、结构(拉曼光谱)和红外光谱表征,我们比较展示了几种基于激光的金对硅进行超掺杂的有前景的方式。我们的结果表明,杂质超掺杂硅材料的最佳效率尚未实现,并且我们根据我们的结果讨论了这些机遇。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/94b3f16cd17d/materials-16-04439-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/151f399ca4a7/materials-16-04439-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/6a0df75d4ebb/materials-16-04439-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/2bbb854e964d/materials-16-04439-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/38f2dbf33140/materials-16-04439-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/3da339810446/materials-16-04439-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/a69980491b58/materials-16-04439-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/4abf5cb596b1/materials-16-04439-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/94b3f16cd17d/materials-16-04439-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/151f399ca4a7/materials-16-04439-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/6a0df75d4ebb/materials-16-04439-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/2bbb854e964d/materials-16-04439-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/38f2dbf33140/materials-16-04439-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/3da339810446/materials-16-04439-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/a69980491b58/materials-16-04439-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/4abf5cb596b1/materials-16-04439-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e89b/10300740/94b3f16cd17d/materials-16-04439-g008.jpg

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Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses.近红外飞秒脉冲对光学厚非晶硅薄膜进行的大规模及局部激光结晶
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Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast.
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Sci Rep. 2019 Nov 7;9(1):16263. doi: 10.1038/s41598-019-52690-9.
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Opt Express. 2014 Sep 22;22(19):22308-13. doi: 10.1364/OE.22.022308.
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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon.室温下超掺杂硅的亚带隙光电响应。
Nat Commun. 2014;5:3011. doi: 10.1038/ncomms4011.