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一种用于MEMS磁盘谐振器陀螺仪的低噪声接口专用集成电路。

A Low-Noise Interface ASIC for MEMS Disk Resonator Gyroscope.

作者信息

Zhang Wenbo, Yin Liang, Wang Yihang, Lv Risheng, Zhang Haifeng, Chen Weiping, Liu Xiaowei, Fu Qiang

机构信息

MEMS Center, Harbin Institute of Technology, Harbin 150001, China.

Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Ministry of Education, Harbin 150001, China.

出版信息

Micromachines (Basel). 2023 Jun 15;14(6):1256. doi: 10.3390/mi14061256.

Abstract

This paper proposes a low-noise interface application-specific integrated circuit (ASIC) for a microelectromechanical systems (MEMS) disk resonator gyroscope (DRG) which operates in force-to-rebalance (FTR) mode. The ASIC employs an analog closed-loop control scheme which incorporates a self-excited drive loop, a rate loop and a quadrature loop. A ΣΔ modulator and a digital filter are also contained in the design to digitize the analog output besides the control loops. The clocks for the modulator and digital circuits are both generated by the self-clocking circuit, which avoids the requirement of additional quartz crystal. A system-level noise model is established to determine the contribution of each noise source in order to reduce the noise at the output. A noise optimization solution suitable for chip integration is proposed based on system-level analysis, which can effectively avoid the effects of the 1/f noise of the PI amplifier and the white noise of the feedback element. A performance of 0.0075°/√h angle random walk (ARW) and 0.038°/h bias instability (BI) is achieved using the proposed noise optimization method. The ASIC is fabricated in a 0.35 μm process with a die area of 4.4 mm × 4.5 mm and power consumption of 50 mW.

摘要

本文提出了一种用于工作在力平衡(FTR)模式下的微机电系统(MEMS)磁盘谐振器陀螺仪(DRG)的低噪声接口专用集成电路(ASIC)。该ASIC采用了一种模拟闭环控制方案,其中包括一个自激驱动回路、一个速率回路和一个正交回路。除了控制回路外,设计中还包含一个ΣΔ调制器和一个数字滤波器,用于将模拟输出数字化。调制器和数字电路的时钟均由自计时电路生成,从而避免了对额外石英晶体的需求。建立了一个系统级噪声模型,以确定每个噪声源的贡献,以便降低输出端的噪声。基于系统级分析,提出了一种适用于芯片集成的噪声优化解决方案,该方案可以有效避免PI放大器的1/f噪声和反馈元件的白噪声的影响。使用所提出的噪声优化方法,实现了0.0075°/√h的角度随机游走(ARW)和0.038°/h的偏置不稳定性(BI)性能。该ASIC采用0.35μm工艺制造,芯片面积为4.4mm×4.5mm,功耗为50mW。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ecf/10304220/f801847893f6/micromachines-14-01256-g001.jpg

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