Sen Dipanjan, Ravichandran Harikrishnan, Das Mayukh, Venkatram Pranavram, Choo Sooho, Varshney Shivasheesh, Zhang Zhiyu, Sun Yongwen, Shah Jay, Subbulakshmi Radhakrishnan Shiva, Saha Akash, Hazra Sankalpa, Chen Chen, Redwing Joan M, Mkhoyan K Andre, Gopalan Venkatraman, Yang Yang, Jalan Bharat, Das Saptarshi
Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA.
Nat Commun. 2024 Dec 30;15(1):10739. doi: 10.1038/s41467-024-54231-z.
Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO nanomembranes integrated with monolayer MoS to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO-gated MoS transistors at 15 K and up to 100 K. Additionally, we exploit room-temperature weak polarization switching, a feature of incipient ferroelectricity, to construct a physical reservoir for pattern recognition. Our results showcase the potential of utilizing perovskite material properties enabled by advancements in freestanding film growth and heterogeneous integration, for diverse functional applications. Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO/2D-MoS device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.
初生态铁电性连接了传统电介质和真正的铁电体，为先进的电子和存储设备提供了可能。首先，我们报道了在与单层二硫化钼集成的独立钛酸锶纳米膜中发现的初生态铁电性，以此制造多功能器件，展示了低温下用于低温存储设备的稳定铁电序。我们的观察结果包括超快极化切换（约10纳秒）、低切换电压（<6伏）、超过10年的非易失性保持、100,000次耐久性循环，以及在15开尔文至100开尔文温度下，钛酸锶门控二硫化钼晶体管中的32种电导状态（5位存储器）。此外，我们利用初生态铁电性的室温弱极化切换特性，构建了一个用于模式识别的物理存储库。我们的结果展示了利用独立薄膜生长和异质集成技术进步所实现的钙钛矿材料特性，用于各种功能应用的潜力。值得注意的是，制造三维钛酸锶/二维二硫化钼器件堆栈的低180°C热预算，使得能够将各种材料集成到硅互补金属氧化物半导体技术中，解决了内存计算和神经形态应用中的挑战。
