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基于氮化锆的等离子体传感器:一种用于CMOS兼容和可调光学特性的传统贵金属基传感器的有前途的替代方案。

ZrN-based plasmonic sensor: a promising alternative to traditional noble metal-based sensors for CMOS-compatible and tunable optical properties.

作者信息

Rakib A K M, Rahad Rummanur, Faruque Md Omar, Sagor Rakibul Hasan

出版信息

Opt Express. 2023 Jul 17;31(15):25280-25297. doi: 10.1364/OE.494550.

DOI:10.1364/OE.494550
PMID:37475337
Abstract

In this article, we introduce a novel comb shaped plasmonic refractive index sensor that employs a ZrN-Insulator-ZrN configuration. The sensor is constructed using Zirconium Nitride (ZrN), an alternative refractory material that offers advantages over traditional metals such as silver and gold, as ZrN is standard Complementary Metal Oxide Semiconductor (CMOS)-compatible and has tunable optical properties. The sensor has recorded a maximum sensitivity, figure of merit (FOM), and sensing resolution of 1445.46 nm/RIU, 140.96, and 6.91 × 10RIU, respectively. Beyond that, the integration of ZrN offers the sensor with various advantages, including higher hardness, thermal stability at high temperatures, better corrosion and abrasion resistance, and lower electrical resistivity, whereas traditional plasmonic metals lack these properties, curtailing the real-world use of plasmonic devices. As a result, our suggested model surpasses the typical noble material based Metal-Insulator-Metal (MIM) arrangement and offers potential for the development of highly efficient, robust, and durable nanometric sensing devices which will create a bridge between nanoelectronics and plasmonics.

摘要

在本文中,我们介绍了一种采用ZrN-绝缘体-ZrN结构的新型梳状等离子体折射率传感器。该传感器使用氮化锆(ZrN)构建,ZrN是一种替代耐火材料,与银和金等传统金属相比具有优势,因为ZrN与标准互补金属氧化物半导体(CMOS)兼容且具有可调光学特性。该传感器分别记录到最大灵敏度、品质因数(FOM)和传感分辨率为1445.46 nm/RIU、140.96和6.91×10 RIU。除此之外,ZrN的集成赋予了传感器多种优势,包括更高的硬度、高温下的热稳定性、更好的耐腐蚀和耐磨性能以及更低的电阻率,而传统等离子体金属缺乏这些特性,限制了等离子体器件的实际应用。因此,我们提出的模型超越了典型的基于贵金属的金属-绝缘体-金属(MIM)结构,并为开发高效、坚固和耐用的纳米传感设备提供了潜力,这将在纳米电子学和等离子体学之间架起一座桥梁。

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