Levy Shiran, Lander Gower Nathalie, Piperno Silvia, Addamane Sadhvikas J, Reno John L, Albo Asaf
Opt Express. 2023 Jul 3;31(14):22274-22283. doi: 10.1364/OE.486446.
We present a highly diagonal "split-well resonant-phonon" (SWRP) active region design for GaAs/AlGaAs terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.
我们展示了一种用于砷化镓/铝镓砷太赫兹量子级联激光器（THz-QCL）的高度对角化“分裂阱共振声子”（SWRP）有源区设计。在室温下观察到负微分电阻，这表明热激活泄漏通道受到抑制。相对于分裂阱直接声子（SWDP）设计，掺杂区与有源能级状态之间的重叠减少。较低激光能级（LLL）与注入器之间的能隙保持在36毫电子伏特，从而能够快速清空LLL。在这项工作中，我们研究了这种结构的温度性能和潜力。
