Gao Li, Zhang Xiankun, Yu Huihui, Hong Mengyu, Wei Xiaofu, Chen Zhangyi, Zhang Qinghua, Liao Qingliang, Zhang Zheng, Zhang Yue
Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
ACS Appl Mater Interfaces. 2023 Aug 16;15(32):38603-38611. doi: 10.1021/acsami.3c07806. Epub 2023 Aug 5.
Two-dimensional (2D) MoS is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (V). Evaluating the impact of vacancy defects on the service reliability of MoS transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS and their influence on the reliability of transistors. The results indicate that V below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of V tend to enrich in pairs and over 3.5% of the enriched V easily evolve into nanopores. The enriched V with electron doping in the channel cause the threshold voltage (V) negative drift approaching 6 V, while the expanded nanopores initiate the V roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain V enrichment, and reliable MoS transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.
二维（2D）二硫化钼是下一代集成电路（IC）晶体管的理想候选沟道材料。然而，由于空位缺陷（如硫空位V）的严重威胁，二硫化钼的可靠性备受关注。评估空位缺陷对二硫化钼晶体管服役可靠性的影响至关重要，但一直受到在服役环境中系统跟踪和分析空位缺陷变化及影响的困难所限制。在此，建立了一个模拟引发剂来解读二硫化钼中空位缺陷的演变及其对晶体管可靠性的影响。结果表明，在起始阶段，低于1.3%的V通过缓慢富集而孤立。超过1.3%的V倾向于成对富集，超过3.5%的富集V容易演变成纳米孔。沟道中具有电子掺杂的富集V导致阈值电压（V）负向漂移接近6V，而扩展的纳米孔引发晶体管的V滚降和穿通。最后，提出了硫蒸汽沉积来抑制V富集，并构建了可靠的二硫化钼晶体管。我们的研究为解读和识别缺陷的影响提供了一种新方法。
