Xiao Jiankun, Chen Kuanglei, Zhang Xiankun, Liu Xiaozhi, Yu Huihui, Gao Li, Hong Mengyu, Gu Lin, Zhang Zheng, Zhang Yue
Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Small Methods. 2023 Nov;7(11):e2300611. doi: 10.1002/smtd.202300611. Epub 2023 Aug 7.
Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS FETs with ultrahigh carrier mobility of 153 cm V s , a large on/off ratio of 4 × 10 , and high saturation current of 342 µA µm . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.
由单层二维半导体（如二硫化钼）制成的场效应晶体管（FET）是未来现代晶圆芯片产业的基础之一。然而，到目前为止，金属 - 半导体界面处异常高的接触电阻严重限制了单层二维半导体FET的性能提升。在此，报道了一种大规模可加工策略，通过简单的硫空位工程在具有大量硫空位（SVs）的金属与单层二硫化钼之间实现欧姆接触。由于通过引入硫空位成功对接触区域进行了掺杂，单层二硫化钼场效应晶体管的接触电阻低至1.7 kΩ·µm。这种低接触电阻使得高性能的二硫化钼场效应晶体管具有153 cm² V⁻¹ s⁻¹的超高载流子迁移率、4×10⁷的大开关比以及342 µA µm⁻¹的高饱和电流。通过调节等离子体持续时间对不同硫空位浓度进行全面研究，还表明硫空位增加的电子掺杂及其导致的肖特基势垒降低是驱动电学性能增强的主导因素。这项工作提供了一种促进工业化原子级薄集成电路发展的简单方法。
