Hart James L, Bhatt Lopa, Zhu Yanbing, Han Myung-Geun, Bianco Elisabeth, Li Shunran, Hynek David J, Schneeloch John A, Tao Yu, Louca Despina, Guo Peijun, Zhu Yimei, Jornada Felipe, Reed Evan J, Kourkoutis Lena F, Cha Judy J
Department of Materials Science and Engineering, Cornell University, Ithaca, USA.
School of Applied and Engineering Physics, Cornell University, Ithaca, USA.
Nat Commun. 2023 Aug 9;14(1):4803. doi: 10.1038/s41467-023-40528-y.
The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe possesses two stacking arrangements, the ferroelectric Weyl semimetal T phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe, it is unclear if the layer stacking follows the T, 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and T domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.
二维材料中的层堆叠顺序强烈影响功能特性,并为下一代电子设备带来了希望。在体相中,八面体碲化钼具有两种堆叠排列,即铁电外尔半金属T相和高阶拓扑绝缘体1T'相。然而,在碲化钼薄片中,尚不清楚层堆叠是否遵循T相、1T'相或其他堆叠顺序。在这里,我们使用原子分辨率扫描透射电子显微镜直接观察碲化钼的层堆叠。在薄片中,我们观察到高度无序的堆叠,存在纳米级的1T'相和T相畴,以及在体相中未发现的其他堆叠排列。我们将这些发现归因于碲化钼堆叠相关自由能的内在限制效应。我们的结果对于理解碲化钼薄片中展示的奇异物理现象很重要。更广泛地说,这项工作表明c轴限制是一种影响其他二维材料中层堆叠的方法。