Sojková Michaela, Píš Igor, Hrdá Jana, Vojteková Tatiana, Pribusová Slušná Lenka, Vegso Karol, Siffalovic Peter, Nadazdy Peter, Dobročka Edmund, Krbal Miloš, Fons Paul J, Munnik Frans, Magnano Elena, Hulman Martin, Bondino Federica
Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia.
IOM-CNR, Istituto Officina dei Materiali, S.S. 14 km - 163.5, Basovizza, Trieste 34149, Italy.
Chem Mater. 2023 Aug 2;35(16):6246-6257. doi: 10.1021/acs.chemmater.3c00669. eCollection 2023 Aug 22.
Molybdenum disulfide (MoS) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS. However, the influence of lithium on the growth of MoS layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS few-layer films prepared using a new method based on one-zone sulfurization with LiS as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS films or during MoS formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS.
二硫化钼（MoS）少层薄膜因其在电子学和光学领域的潜在应用，以及作为能量转换与存储的一种有前景的材料而备受关注。插入碱金属，如锂，为调控MoS的电子性质提供了契机。然而，锂对MoS层生长的影响尚未得到充分研究。在此，我们研究了锂如何影响采用以LiS作为锂源的单区硫化新方法制备的MoS少层薄膜的结构和光学性质。该方法能够在已制备的MoS薄膜的八面体和四面体位置或在MoS形成过程中掺入锂。我们的结果发现锂对促进薄膜的外延生长和水平排列有重要作用。此外，我们观察到锂化后垂直排列的MoS薄膜发生了从垂直到水平的重新取向。测量结果表明水平排列的锂掺杂MoS具有长期稳定性且化学成分得以保留。
