Zarghami Sepehr, Hayati Mohsen
Electrical Engineering Department, Faculty of Engineering, Razi University, Kermanshah, 67149-67346, Iran.
Sci Rep. 2023 Sep 22;13(1):15815. doi: 10.1038/s41598-023-42821-8.
This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier. The proposed BSF provides isolation and efficiency, effectively separating the output power and power gain between the two operational bands. Additionally, a dual-mode bias circuit is designed to serve as an inductor choke and control the second harmonics for both operating frequencies simultaneously. Two dual-band PAs, utilizing LDMOS and GaN HEMT transistors, have been designed using the proposed output matching circuit, which incorporates the BSF, bias circuit, and compensation circuit. The results obtained from both PAs, employing different transistors, are identical. Based on the presented concepts, a dual-band PA with an LDMOS transistor has been fabricated and measured. The measurements reveal an efficiency of 79.23%, an output power of 39.85 dBm, and a power gain of 14.85 dB at a frequency of 0.7 GHz. Similarly, at a frequency of 1.9 GHz, the efficiency is 77.24%, the output power is 38.22 dBm, and the power gain is 13.22 dB.
本文介绍了一种采用曲折线带阻滤波器（BSF）的双频段功率放大器（PA）。该设计中解决的一个重要挑战是在放大器的工作频段之间实现适当的隔离。所提出的带阻滤波器提供隔离和效率，有效地分离两个工作频段之间的输出功率和功率增益。此外，设计了一种双模偏置电路，用作电感扼流圈并同时控制两个工作频率的二次谐波。利用所提出的输出匹配电路，设计了两款分别采用LDMOS和GaN HEMT晶体管的双频段功率放大器，该输出匹配电路包含带阻滤波器、偏置电路和补偿电路。采用不同晶体管的两款功率放大器所获得的结果是相同的。基于所提出的概念，制作并测量了一款采用LDMOS晶体管的双频段功率放大器。测量结果显示，在0.7GHz频率下，效率为79.23%，输出功率为39.85dBm，功率增益为14.85dB。同样，在1.9GHz频率下，效率为77.24%，输出功率为38.22dBm，功率增益为13.22dB。
