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高通量碲锌镉探测器上的高性能铂触点。

High performance platinum contacts on high-flux CdZnTe detectors.

作者信息

Bettelli Manuele, Zanettini Silvia, Abbene Leonardo, Casoli Francesca, Nasi Lucia, Trevisi Giovanna, Principato Fabio, Buttacavoli Antonino, Zappettini Andrea

机构信息

IMEM-CNR, 43124, Parma, Italy.

due2lab S.R.L., 42019, Scandiano, RE, Italy.

出版信息

Sci Rep. 2023 Oct 20;13(1):17963. doi: 10.1038/s41598-023-45331-9.

Abstract

The need for direct X-ray detection under high photon flux with moderate or high energies (30-100 keV range) has strongly increased with the rise of the 4th Generation Synchrotron Light Sources, characterised by extremely brilliant beamlines, and of other applications such as spectral computed tomography in medicine and non-destructive tests for industry. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies can be considered the reference material for high-flux applications (HF-CZT). The enhanced charge transport properties of the holes allow the mitigation of the effects of radiation induced polarization phenomena, typically observed in standard CZT materials (LF-CZT) under high photon flux. However, standard LF-CZT electrical contacts led to inacceptable high dark leakage currents on HF-CZT devices. In this work, a detailed study on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors is reported. The results from electrical and spectroscopic investigations, showed the best performances on HF-CZT detectors with platinum anode, coupled with both platinum or gold cathode. The morphology, structure, and composition of Pt/CZT contact have been analysed by means of Transmission Electron Microscopy (TEM) on microscopic lamellas obtained by Focused Ion Beam (FIB), highlighting the presence of CdTeO oxide at the metal semiconductor interface.

摘要

随着第四代同步辐射光源的兴起,以及医学中的光谱计算机断层扫描和工业无损检测等其他应用的发展,在中等或高能量(30 - 100 keV范围)的高光子通量下进行直接X射线检测的需求大幅增加。第四代同步辐射光源具有极其明亮的光束线。Redlen Technologies开发的新型碲锌镉(CZT)可被视为高通量应用(HF - CZT)的参考材料。空穴增强的电荷传输特性能够减轻辐射诱导极化现象的影响,这种现象通常在标准CZT材料(LF - CZT)处于高光子通量时出现。然而,标准的LF - CZT电接触会导致HF - CZT器件上出现不可接受的高暗漏电流。在这项工作中,报告了对HF - CZT探测器上新的优化溅射铂电接触特性的详细研究。电学和光谱学研究结果表明,在HF - CZT探测器上,铂阳极与铂或金阴极相结合时表现出最佳性能。通过聚焦离子束(FIB)获得的微观薄片上的透射电子显微镜(TEM)分析了Pt/CZT接触的形态、结构和成分,突出了金属半导体界面处CdTeO氧化物的存在。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0c74/10589347/7f49477d8558/41598_2023_45331_Fig1_HTML.jpg

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