Campanelli R B, Gomes G S, Donatti M M, Perissinotto L S, Pereira A D, Antonio E B, Vincoletto P L, Fernandes M G, Araujo L S, Polli J M, Marques F C
Brazilian Center for Research in Energy and Materials (CNPEM), Brazilian Synchrotron Light Laboratory (LNLS), Campinas, 13083-100, Brazil.
State University of Campinas, Institute of Physics "Gleb Wataghin" (IFGW), Campinas, 13083-859, Brazil.
Sci Rep. 2024 Nov 9;14(1):27430. doi: 10.1038/s41598-024-74384-7.
High-energy photon imaging experiments are crucial techniques in synchrotron facilities, often employing hybrid pixel detectors for these operations. These detectors combine a photo-sensitive semiconductor component with a pixelated microelectronic Application Specific Integrated Circuit (ASIC) for signal processing and image formation. However, detecting photons above 90 keV poses significant challenges, even for heavy semiconductors, due to lower photoelectric absorption cross-section at this energy range. Nevertheless, lead-based perovskites, such as , are remarkable alternatives as they present excellent cross-section values and noteworthy transport properties, contributing to increased high-energy detection efficiencies. Here, we employ a chemical synthesis route for single-crystals, enabling experimental measurements of carrier mobility of 100.7 /Vs. We also developed a simulation algorithm to calculate the current pulses generated on pixelated electrodes. Our simulations evaluate 's performance coupled with the latest photon-counter ASIC developed by CERN, the Timepix4. Our findings indicate that crystals require intense applied electric fields, around 1 kV/mm, for accurate signal integration. Furthermore, we observed no correlation between incident energy and induced pulse width. Through microelectronics simulations, we demonstrate that the signal formation behavior of is compatible with Timepix4 ASICs, consequently establishing operational guidelines for employing this promising material as sensors in hybrid pixel detectors.
高能光子成像实验是同步加速器设施中的关键技术，这些操作通常采用混合像素探测器。这些探测器将一个光敏半导体组件与一个像素化的微电子专用集成电路（ASIC）相结合，用于信号处理和图像形成。然而，即使对于重半导体来说，检测能量高于90 keV的光子也面临重大挑战，因为在这个能量范围内光电吸收截面较低。尽管如此，基于铅的钙钛矿，如 ，是显著的替代方案，因为它们具有出色的截面值和值得注意的传输特性，有助于提高高能探测效率。在这里，我们采用化学合成路线制备 单晶，从而能够对载流子迁移率为100.7 /Vs进行实验测量。我们还开发了一种模拟算法来计算像素化电极上产生的电流脉冲。我们的模拟评估了 与欧洲核子研究组织（CERN）开发的最新光子计数器ASIC即Timepix4相结合的性能。我们的研究结果表明， 晶体需要大约1 kV/mm的强外加电场才能进行精确的信号积分。此外，我们观察到入射能量与感应脉冲宽度之间没有相关性。通过微电子模拟，我们证明了 的信号形成行为与Timepix4 ASIC兼容，从而为在混合像素探测器中使用这种有前景的材料作为传感器建立了操作指南。
