Shu Lincong, Yao Suhao, Xi Zhaoying, Liu Zeng, Guo Yufeng, Tang Weihua
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China.
National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China.
Nanotechnology. 2023 Nov 16;35(5). doi: 10.1088/1361-6528/ad079f.
With the continuous advancement of deep-ultraviolet (DUV) communication and optoelectronic detection, research in this field has become a significant focal point in the scientific community. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (GaO) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection. Therefore, this paper mainly focuses on GaOsemiconductor detector array which has gained widespread attention in the field of DUV technique, from the perspective of individual device to array and its optoelectonic integration, for reviewing and discussing the research progress in design, fabrication, and application of GaOarrays in recent years. It includes the structure design and material selection of array units, units growth and array layout, response to solar blind light, the method of imaging and image recognition. Morever, the future development trend of the photodetector array has been analyzed and reflected, aiming to provide some useful suggestions for the optimizing array structure, improving patterned growth technology and material growth quality. As well as GaOoptoelectronic devices and their applications are discussed in view of device physics and photophysics in detector.
随着深紫外（DUV）通信和光电探测技术的不断进步，该领域的研究已成为科学界的一个重要焦点。为了实现更精确的信息采集与传输，多像素光电探测器阵列是紫外成像和通信系统的关键，其光电性能严重依赖于半导体材料和阵列布局。氧化镓（GaO）是一种新兴的宽带隙半导体材料，已广泛应用于深紫外探测。因此，本文主要聚焦于在深紫外技术领域受到广泛关注的氧化镓半导体探测器阵列，从单个器件到阵列及其光电集成的角度，对近年来氧化镓阵列在设计、制造和应用方面的研究进展进行综述和讨论。内容包括阵列单元的结构设计和材料选择、单元生长和阵列布局、对日盲光的响应、成像方法和图像识别。此外，分析并展望了光电探测器阵列的未来发展趋势，旨在为优化阵列结构、改进图形化生长技术和提高材料生长质量提供一些有益的建议。同时，从探测器的器件物理和光物理角度讨论了氧化镓光电器件及其应用。
