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用于日盲紫外光探测的一维β-GaO的可控水热合成

Controllable Hydrothermal Synthesis of 1D β-GaO for Solar-Blind Ultraviolet Photodetection.

作者信息

Mao Lingfeng, Wang Xiaoxuan, Huang Chaoyang, Ma Yi, Qin Feifei, Lu Wendong, Zhu Gangyi, Shi Zengliang, Cui Qiannan, Xu Chunxiang

机构信息

State Key Laboratory of Digital Medical Engineering, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.

College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China.

出版信息

Nanomaterials (Basel). 2025 Mar 6;15(5):402. doi: 10.3390/nano15050402.

Abstract

Gallium oxide (GaO), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) GaO nanorods were designed to achieve high photodetection performance due to their effective light absorption and light field confinement. Through modulating source concentration, pH value, temperature, and reaction time, 1D β-GaO nanorods were controllably fabricated using a cost-effective hydrothermal method, followed by post-annealing. The nanorods had a diameter of ~500 nm, length from 0.5 to 3 μm, and structure from nanorods to spindles, indicating that different β-GaO nanorods can be utilized controllably through tuning reaction parameters. The 1D β-GaO nanorods with a high length-to-diameter ratio were chosen to construct metal-semiconductor-metal type photodetectors. These devices exhibited a high responsivity of 8.0 × 10 A/W and detectivity of 4.58 × 10 Jones under 254 nm light irradiation. The findings highlighted the potential of 1D GaO nanostructures for high-performance solar-blind ultraviolet photodetectors, paving the way for future integrable deep ultraviolet optoelectronic devices.

摘要

氧化镓(GaO)是一种超宽带隙半导体,是日盲型光电探测器的理想材料,但仍存在诸如低响应度和响应速度等挑战。在本文中,一维(1D)GaO纳米棒因其有效的光吸收和光场限制而被设计用于实现高光探测性能。通过调节源浓度、pH值、温度和反应时间,采用经济高效的水热法可控地制备了1Dβ-GaO纳米棒,随后进行退火处理。纳米棒的直径约为500nm,长度为0.5至3μm,结构从纳米棒到纺锤体,这表明通过调整反应参数可以可控地利用不同的β-GaO纳米棒。选择具有高长径比的1Dβ-GaO纳米棒来构建金属-半导体-金属型光电探测器。这些器件在254nm光照射下表现出8.0×10A/W的高响应度和4.58×10琼斯的探测率。这些发现突出了1D GaO纳米结构在高性能日盲型紫外光电探测器方面的潜力,为未来可集成的深紫外光电器件铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4df/11902161/777a3ff1d847/nanomaterials-15-00402-g001.jpg

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