Sala Giacomo, Wang Hanchen, Legrand William, Gambardella Pietro
Department of Materials, ETH Zurich, Hönggerbergring 64, 8093 Zurich, Switzerland.
Phys Rev Lett. 2023 Oct 13;131(15):156703. doi: 10.1103/PhysRevLett.131.156703.
The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle magnetoresistance in single layers of Mn with weak spin-orbit coupling, which we attribute to the orbital Hall effect. The simultaneous observation of a sizable Hanle magnetoresistance and vanishing small spin Hall magnetoresistance in BiYIG/Mn bilayers corroborates the orbital origin of both effects. We estimate an orbital Hall angle of 0.016, an orbital relaxation time of 2 ps and diffusion length of the order of 2 nm in disordered Mn. Our findings indicate that current-induced orbital moments are responsible for magnetoresistance effects comparable to or even larger than those determined by spin moments, and provide a tool to investigate nonequilibrium orbital transport phenomena.
汉勒磁电阻是无磁性导体中自旋进动的一个明显特征,其中强自旋 - 轨道耦合通过自旋霍尔效应产生边缘自旋积累。在此,我们报道了在具有弱自旋 - 轨道耦合的单层锰中存在大的汉勒磁电阻,我们将其归因于轨道霍尔效应。在BiYIG/锰双层结构中同时观测到可观的汉勒磁电阻和消失的小自旋霍尔磁电阻,证实了这两种效应的轨道起源。我们估计在无序锰中轨道霍尔角为0.016,轨道弛豫时间为2皮秒,扩散长度约为2纳米。我们的研究结果表明,电流诱导的轨道矩对磁电阻效应的贡献与自旋矩相当甚至更大,并提供了一种研究非平衡轨道输运现象的工具。