Cho Soonha, Baek Seung-Heon Chris, Lee Kyeong-Dong, Jo Younghun, Park Byong-Guk
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea.
Department of Electrical Engineering, KAIST, Daejeon 305-701, Korea.
Sci Rep. 2015 Oct 1;5:14668. doi: 10.1038/srep14668.
The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques.
由于重金属/铁磁体/氧化物结构中的自旋轨道相互作用现象可通过面内电流来操纵磁化方向,因此已得到广泛研究。这意味着存在一种逆效应,即此类结构中的电导率应取决于磁化方向。在本工作中,我们报告了对W/CoFeB/MgO结构的磁电阻(MR)及其与电流诱导的磁化转矩之间相关性的系统研究。我们观察到,MR与磁化方向和电流方向之间的夹角无关,而是由相对于自旋霍尔效应积累的自旋方向的相对磁化方向决定,其对称性与所谓的自旋霍尔磁电阻相同。W/CoFeB/MgO样品中约1%的MR远大于Ta/CoFeB/MgO或Pt/Co/AlOx等其他结构中的MR,这表明W具有更大的自旋霍尔角。此外,MR和电流诱导的磁化翻转效率对W厚度的相似依赖性表明,非磁体/铁磁体结构中的MR可用于理解其他密切相关的自旋轨道耦合效应,如逆自旋霍尔效应或自旋轨道自旋转移转矩。