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强自旋轨道耦合薄金属膜中的 Hanle 磁阻。

Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

机构信息

CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.

Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastian, Basque Country, Spain.

出版信息

Phys Rev Lett. 2016 Jan 8;116(1):016603. doi: 10.1103/PhysRevLett.116.016603.

Abstract

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

摘要

我们报告了在 Pt 和 Ta 薄膜中一种新型磁电阻的测量结果。由于 Hanle 效应,自旋霍尔效应在薄膜表面产生的自旋积累会在磁场中减小,从而导致电阻增加,正如 Dyakonov 所预测的那样[Phys. Rev. Lett. 99, 126601 (2007)]。这种磁电阻的各向异性类似于最近在 Pt/Y(3)Fe(5)O(12)双层薄膜中发现的自旋霍尔磁电阻,尽管不需要铁磁绝缘体。我们表明,这种 Hanle 磁电阻是一种简单的替代方法,可以定量研究强自旋轨道耦合金属中电荷和自旋电流之间的耦合。

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